14 Sep 20

New charge based model for Double Gate JFETs (CJM)

A new compact model of double-gate-JFETs called CJM was developed with the support of Innovation-el. The model has been validated using static and dynamic TCAD simulations and device measurements. The CJM model opens new perspectives in the design of analog, digital, and RF circuits using JFETs.

The study – published in IEEE Journal of the Electron Devices Society 2019, vol. 7, pp. 1191-1199; https://doi.org/10.1109/JEDS.2019.2944817 - carried out by Nikolaos Makris and Matthias Bucher of Technical University of Crete (TUC) and co-authored by Farzan Jazaeri and Jean-Michel Sallese, Ecole Polytechnique Fédérale de Lausanne (EPFL),[N1]  was supported by Innovation-el. The paper is an extended version of: A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs,  48th European Solid-State Device Research Conference (ESSDERC), Dresden, 2018, pp. 238-241, https://doi.org/10.1109/ESSDERC.2018.8486848 which was selected for the European Solid-State Device Research Conference (ESSDERC) 'Best Paper Award' (link).

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