28 May 20

New research for highly sensitive and selective NO2 chemical sensors based on Al doped NiO thin films

The facilities provided by Innovation-el was used for developing highly transparent Al doped NiO films grown by RF -sputtering followed by post deposition annealing.

The study – published in Materials Science in Semiconductor Processing 2020, 115, 105149; https://doi.org/10.1016/j.mssp.2020.105149 - carried out by scientists at the Institute of Electronic Structure and Laser, Foundation for Research and Technology was supported by the infrastructure of Innovation-el.

Innovation-el facilities are available to potential academic and industrial users through the platform.