ALD / Atomic Layer Deposition

Atomic Layer Deposition (ALD) is an advanced deposition technique that allows for ultra-thin films of a few nanometres to be deposited in a precisely controlled way. It is based on the sequential use of a gas phase chemical process. Layers are formed during reaction cycles by alternately pulsing precursors and reactants and purging with inert gas in between each pulse.‬ Not only does ALD provide excellent thickness control and uniformity but 3D structures can be covered with a conformal coating for high-aspect-ratio structures.

Building devices atom by atom gives us very precise control over the process. It can be applied to produce different oxides, nitrides or other compounds. ALD provides excellent surface control and can produce thin, uniform and pinhole-free films over large areas by single or tailored multiple layer deposition. The level of film and interface control and high film quality provided are used in many applications.

Tool

Picosun ALD R-200 Advanced reactor

Loaded Precursors

Trimethyl aluminium (TMA), Tetrakis(ethylmethylamido)hafnium(IV) (TEMAHf), H2O, (O3 expected January 2020)

Process Parameters

Temperature range: 50-500⁰C
Pressure: 8-12 mbar
N2 flow: 100-300sccm

Substrate Size

Samples up to 6΄΄ wafer, no loose nano-particles accepted.

Substrate Loading

Manual loading with a pneumatic lift

Applications

Deposition of conformal thin-film alumina or hafnia for various applications such as: gate dielectrics for MOSFETs, protective coatings for sensors, etc.

Additional Information

Dr. George Deligeorgis, deligeo@physics.uoc.gr
Dr. George Konstantinidis, aek@physics.uoc.gr

Tool

Home-made hot-wire ALD reactor

Applications

Deposition of Tungsten, Molybdenum and Tantalum oxides with various oxygen stoichiometries and doping.

Loaded Precursors

Vapors of oxides produced by the various metallic wires used (W, Mo, Ta) together with O2, H2 for stoichiometry control and HF, Benzene as dopants

Process Parameters

Temperature range: 20-300⁰C
Pressure: 1-10 mbar

Substrate Size

Samples up to 3” wafer

Substrate Loading

Manual loading

Additional Information

Dr. Dimitris Davazoglou, d.davazoglou@inn.demokritos.gr

Tool

Picosun ALD R-200 reactor

Loaded Precursors

Trimethyl aluminium (TMA), H2O

Process Parameters

Temperature range: 50-500⁰C
Pressure: 8-12 mbar
N2 flow: 100-300sccm

Substrate Size

From samples 1x1cm2 up to 6΄΄ wafer

Substrate Loading

Manual loading with a pneumatic lift

Applications

Deposition of thin-film alumina protective coatings for sensors, alumina-based dielectric layers for resistive-switching memories, etc.

Additional Information

Dr. Panagiotis Bousoulas, panbous@mail.ntua.gr
Dr. Menelaos-Charalampos Tsigkourakos, mxtsig@gmail.com

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