ALD / Atomic Layer Deposition
Atomic Layer Deposition (ALD) is an advanced deposition technique that allows for ultra-thin films of a few nanometres to be deposited in a precisely controlled way. It is based on the sequential use of a gas phase chemical process. Layers are formed during reaction cycles by alternately pulsing precursors and reactants and purging with inert gas in between each pulse. Not only does ALD provide excellent thickness control and uniformity but 3D structures can be covered with a conformal coating for high-aspect-ratio structures.
Building devices atom by atom gives us very precise control over the process. It can be applied to produce different oxides, nitrides or other compounds. ALD provides excellent surface control and can produce thin, uniform and pinhole-free films over large areas by single or tailored multiple layer deposition. The level of film and interface control and high film quality provided are used in many applications.
Picosun ALD R-200 reactor
Trimethyl aluminium (TMA), H2O
Temperature range: 50-500⁰C
Pressure: 8-12 mbar
N2 flow: 100-300sccm
From samples 1x1cm2 up to 6΄΄ wafer
Manual loading with a pneumatic lift
Deposition of thin-film alumina protective coatings for sensors, alumina-based dielectric layers for resistive-switching memories, etc.
Dr. Panagiotis Bousoulas, panbous@mail.ntua.gr
Dr. Menelaos-Charalampos Tsigkourakos, mxtsig@gmail.com
Picosun ALD R-200 Advanced reactor
Trimethyl aluminium (TMA), Tetrakis(ethylmethylamido)hafnium(IV) (TEMAHf), H2O, (O3 expected January 2020)
Temperature range: 50-500⁰C
Pressure: 8-12 mbar
N2 flow: 100-300sccm
Samples up to 6΄΄ wafer, no loose nano-particles accepted.
Manual loading with a pneumatic lift
Deposition of conformal thin-film alumina or hafnia for various applications such as: gate dielectrics for MOSFETs, protective coatings for sensors, etc.
Dr. George Deligeorgis, deligeo@physics.uoc.gr
Dr. George Konstantinidis, aek@physics.uoc.gr
Home-made hot-wire ALD reactor
Deposition of Tungsten, Molybdenum and Tantalum oxides with various oxygen stoichiometries and doping.
Vapors of oxides produced by the various metallic wires used (W, Mo, Ta) together with O2, H2 for stoichiometry control and HF, Benzene as dopants
Temperature range: 20-300⁰C
Pressure: 1-10 mbar
Samples up to 3” wafer
Manual loading
Dr. Dimitris Davazoglou, d.davazoglou@inn.demokritos.gr
