ICPE / Inductively Coupled Plasma Etching
Inductively Coupled Plasma Etching is one of the two major categories of the plasma etching process. In a typical ICP etcher, plasma is initiated inductively under low pressure by applying a Radio Frequency (RF) electromagnetic field to the substrate. Typical value of the frequency of the RF field is 13.56MHz at a value of a few hundreds of watts. An ICP system has high ionization efficiency and generates a high density plasma. As a result ICP has high etching rates and better profile control compared to a typical RIE system. Therefore ICP etchers are ideal for deep etching applications (micromachining for silicon or polymers) where a high degree of anisotropy, and fast etching are required.
Alcatel-Adixen MET system
Etching of Si (including deep etching), SiO2, Si3N4 and polymers. Modification of surfaces, surface nanotexturing, fully anisotropic to isotropic processes possible. Deposition of Teflon-like films for wetting control.
High Density Plasma Etcher with Helicon antenna operating in inductive mode
0 – 2000 Watt
0 – 300 Watt (bias voltage 0 – 200V)
O2, N2, SF6, C4F8, N2, other non-corrosive, non-toxic also possible
Maximum 4” wafer size with 3mm thickness. Smaller pieces are glued on Si wafer
Dr. Evangelos Gogolides , firstname.lastname@example.org