Micro-nanofabrication  /  Lithography  /  PLG / Photolithography

PLG / Photolithography

Photolithography, also known as optical lithography, consists in transferring the geometric pattern of a photomask to a UV light-sensitive material (termed as photoresist) deposited onto rigid or flexible substrates. Light exposure induces chemical changes that allow selective dissolution of the exposed (positive tone photoresist) or unexposed (negative tone) regions of the photoresist in a solution called developer. This results in the engraving of the mask pattern or its reverse into the photoresist.

UV exposure is performed using a Mask Aligner that allows high precision mask-to-sample alignment. Both the MJB3 and MA6/BA6 Mask Aligners from SÜSS MicroTec are available in clean-room environment. Different contact exposure modes (vacuum, hard, soft contacts) are available for a sample size up to 4 inch in diameter.

Tool

SÜSS MicroTec MA6/BA6 & KARL SÜSS MJB3 Mask Aligners

Applications

Photoresist patterning for the development of Microelectronic / Photonic devices and Microsystems

Environment

Clean-Room (ISO 6 / Class 1000)

Source / Exposure Wavelength (Band-Pass Filter)

UV light / MA6: 320 nm, MJB3: 365 nm

Pattern Resolution

MA6: 0.8 μm (vacuum contact), MJB3: ~ 1 μm

Alignment Mode & Accuracy

Top & Back (MA6) and top (MJB3) side alignment
MA6: ± 0.5 μm (top side mode), ~ 1 μm (back side mode)
MJB3: ± 2 μm

Sample Size

MA6: 3” & 4” wafers (4” & 5” masks)
MJB3: From 2x2cm2 pieces to wafers up to 3” (4” mask)

Contact Modes

MA6: Hard/soft/vacuum contact, MJB3: Hard/soft

Related Tools

Karl Süss RC8 & Headway EC 101D spin-coaters, High-precision hotplate (ATV)

Additional Information

Dr. Vassilis Vamvakas, v.vamvakas@inn.demokritos.gr

Tool

SÜSS MicroTec MA6/BA6 & KARL SÜSS MJB3 Mask Aligners

Applications

Photoresist patterning for the development of Microelectronic / Photonic devices and Microsystems

Environment

Clean-Room (ISO 6 / Class 1000)

Source / Exposure Wavelength (Band-Pass Filter)

UV & Deep UV light / MA6: UV 320 nm & DUV 250nm, MJB3: 365 nm

Pattern Resolution

MA6: 1 μm (vacuum contact), MJB3: ~ 1 μm (vacuum contact)

Alignment Mode & Accuracy

Top & Back (MA6) and top (MJB3) side alignment
MA6: ± 2 μm (top side mode), ~ 10 μm (back side mode)
MJB3: ± 2 μmSample size

Sample Size

MA6: From 2x2cm2 pieces to 4” wafers (4” & 5” masks)
MJB3: From 2x2cm2Contact modes pieces to wafers up to 3” (4” mask)

Contact Modes

MA6: Hard/soft/vacuum/proximity, MJB3: Hard/soft/vacuum

Related Tools

Karl Süss LabSpin 6 & Headway spin-coaters, Programmable Vacuum Hotplate: UniTemp GmbH VHP-210-160

Additional Information

Kostopoulos Athansios, kosto@physics.uoc.gr

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