RIE / Reactive Ion Etching

Reactive Ion Etching (RIE) is one of the two major categories of the plasma etching process. In a typical RIE, plasma is initiated under low pressure by applying a Radio Frequency (RF) voltage capacitively coupled to the substrate. Typical value for the RF frequency of the voltage is 13.56MHz. The generated electric field is applied at a power of a few hundreds of Watt. An RIE system has a low ionization efficiency and generates a low density plasma. Both features result in low etching rates making RIEs a good choice for thin film applications. In contrast to the typical isotropic etch profiles resulting from wet chemical etch processing, highly controllable isotropic and anisotropic etch profiles can be produced by RIE depending on the treated material and etching parameters (pressure, gas, power).

Innovation-el offers access to two RIE tools for dry etching at the micro/nanoscale of a wide range of materials (Si & III-V semiconductors, dielectrics, metals, polymers, etc.).

Tool

RIE Alcatel / Nextral NE330

Applications

Dry etching of Si, GaAs, SiO2, Si3N4 and organic materials. Surface modification.

RF Frequency

13.56MHz

RF Power

0 – 500Watt

Pressure

5 to 100mTorr

Gases

O2, N2, SF6, CHF3

Sample Dimensions

From pieces of 1 x 1 cm2 up to 5 wafers of 4 inch in diameter

Additional Information

Dr. Vassilis Vamvakas, v.vamvakas@inn.demokritos.gr

Tool

RIE Vacutec 1500

Applications

Dry etching of GaAs, AlGaAs, AlAs, InGaAs, GaN, AlGaN, InGaN, InN, AlN and relevant heterostructures, Si, SiO2, Si3N4, Photoresists and Polymers, BCB and Polyimides

RF Frequency

13.56MHz

RF Power

0 – 300Watt

Pressure

10 to 500mTorr

Gases

O2, N2, Ar, SF6, CF4, BCl3, Cl2, H2

Sample Dimensions

From pieces of ~ 1 x 1 cm2 up to 5 wafers of 4 inch in diameter

Additional Information

Mr. Antonios Stavrinidis, astav@physics.uoc.gr

Ask for more information on availability,dates and pricing Submit Your Query
provided at Innovation-el by:
IESL/FORTH Heraklion