RTP /Rapid Thermal Processing
Rapid Thermal Processing (RTP) is a heat treatment where semiconductor substrates or other materials are exposed to high temperatures for short periods of time with ramp rates typically in the range from 100 to 300 °C/s. RTP is commonly referred to as (1) Rapid Thermal Annealing (RTA) or (2) Rapid Thermal Oxidation (RTO) in case processing is done under (1) vacuum, neutral (N2, Ar) or forming gas (H2N2) ambient, or (2) oxidizing (e.g., O2) atmosphere.
RTP is commonly used to repair lattice damage after ion implantation and activate the implanted dopant impurities while minimizing their diffusion, to densify deposited layer materials, to form ohmic contact alloys, to drive dopant impurities from one layer into another, to heal an interface from defects, to grow thin silicon dioxide films, etc.
Innovation.el offers access to RTP systems for RTA and RTO processing based on optical radiation heating from halogen lamps allowing fast sample heating and cooling rates.
JIPELEC / FAV4 SYSTEM
Metal annealing for ohmic contacts alloys, Dopant activation and crystal reconstruction after ion implantation
Stainless steel cold wall chamber
Radiation heating by 12 tubular lamps
IR pyrometer
Up to 4” wafers
100oC - 1000oC
10min
RU: 150oC/s, RD: 350oC/s @ 1000oC
± 2oC
± 5oC @ 1000oC (during steady state, with gas flow < 0.1 Lit/min, at 5 mm far from the wafer edge)
± 15oC depending on calibration and wafer
Vacuum (annular pumping around the wafer) with or without gas flow
N2, Ar, forming gas N2 (5% H2), forming gas Ar (5% H2), all at least 99.995% purity, (maximum flow 500sccm)
Clean-Room (ISO 6 / Class 1000)
Athanasios Kostopoulos (kosto@physics.uoc.gr)
AS-ONE, Anneal Sys (Rapid Thermal Processor)
Post-implantation dopant activation, Thermal annealing of thin films, Rapid thermal oxidation, Densification and crystallization, Glass reflow
Stainless steel cold wall chamber
12 infrared halogen lamp furnace
Optical pyrometer (400oC -1300oC)
From 4” wafer down to 1 cm x 1 cm square sized samples
400oC – 1250oC
120 min < 800oC, 60min@900oC, 12min@1000oC, 10min@1050oC, 7min@1100oC, 6min@1150oC, 5min@1200oC, 3min@1250oC
RU: from 200oC/s, RD: 100oC/s
± 1oC
N/A
± 2oC
Atmospheric or Vacuum with or without gas flow
O2 (0 – 2000sccm), N2 (0 – 2000sccm)
Clean-Room (ISO 6 / Class 1000)
Vassilis Vamvakas (v.vamvakas@inn.demokritos.gr)
