SEM /Scanning Electron Microscopy

Scanning Electron Microscopy utilizes a fine focused electron beam that is scanned across the surface of the sample. The beam electrons interact with the sample producing various signals that are used to form images of the surface topography (secondary electrons) and Z-contrast images (backscattered electrons) Apart imaging the surface of the sample from the mm to the nm scale, a variety of analytical techniques can be applied in a SEM including: Elemental analysis can be performed by Energy Dispersive X-ray (EDX) spectroscopy through analysis of the X-rays emitted by the sample; Crystallographic phase distribution and local texture of the specimen can be measured through Electron Backscattered Diffraction (EBSD). Finally apart the conventional high-vacuum sample environment, low-vacuum microscopes are used for the study of samples producing a high amount of vapour.

The facility includes 5 microscopes ranging from conventional SEM to HRSEM (1nm resolution) and low-vacuum SEM equipped with analytical techniques such as EDS and EBSD.

Tool

FEI :Quanta Inspect SEM

Applications

Conventional & Low pressure Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (EDX) analysis

Source

Thermionic gun W

Beam Voltage

0.2-30kV

Resolution

3.5nm@30kV

Detectors

E-T, BS, LFD (low vacuum), EDX (light elements down to B), CCD IR inspection camera

Stage

Motorized x,y(±50mm), z(25mm), rotation (360 continuous), tilt (-10 to +80 deg)

Other Capabilities

Low vacuum mode (up to 0.70 Torr), quantitative elemental analysis: point, line, area, map.
Au & C coating of samples

Additional Information

Nikos Boukos, n.boukos@inn.demokritos.gr

Tool

JEOL / JSM 7401F Field Emission SEM (FESEM)

Applications

Conventional SEM operation and low voltage operation to study surfaces of a large variety of non-conductive specimens, with nanometer scale resolution. Materials: metals, ceramics, plastics, polymers, oxides, semiconductors and semiconducting devices. Surface features and particles from the nanometer to the millimeter scale.

Source

Cold field emission electron gun (Tungsten single crystal emitter)

Beam Voltage

0.1 to 30 kV

Resolution

1.0nm (15kV), 1.5nm (1kV)

Detectors

Three Electron Detectors + Camera: Upper secondary electron in-lens (SEI), Lower secondary electron (LEI), Retractable backscattered electrons detectors (RBEI) & IR camera

Stage

Eucentric goniometer stage. Computer controlled 3-axis: X-Y: 70 x 50mm, rotation R:360o and manual handling of Z-axis: 1.5 up to 25mm and tilt from -5o up to +70o

Other Capabilities

Magnification up to x1.000.000, Vaccum down to 10-8Pa, Sample Size: From 10mm x 10mm to 10cm x 10cm, Maximum Sample Height: 10mm

Additional Information

Dr. V. Vamvakas, v.vamvakas@inn.demokritos.gr

Tool

JEOL / JSM 7401F Field Emission SEM (FESEM)

Applications

Conventional SEM operation. Gentle beam option to study non-conductive samples. Materials: metals, ceramics and carbon, plastics, polymers, oxides, semiconductors.

Source

Cold field emission electron gun (Tungsten single crystal emitter)

Beam Voltage

0.1 to 30 kV

Resolution

1.0nm (15kV), 1.5nm (1kV)

Detectors

Three Electron Detectors + Camera: Upper secondary electron in-lens (SEI), Lower secondary electron (LEI), Retractable backscattered electrons detectors (RBEI) & IR camera

Stage

Eucentric goniometer stage. Computer controlled 3-axis: X-Y: 70 x 50mm, rotation R:360o and manual handling of Z-axis: 1.5 up to 25mm and tilt from -5o up to +70o

Other Capabilities

Magnification up to x1.000.000, Vaccum down to 10-8Pa, Sample Size: From 10mm x 10mm to 10cm x 10cm, Maximum Sample Height: 10mm

Additional Information

Dr. F. Katsaros, f.katsaros@inn.demokritos.gr

Tool

Zeiss Supra 35 VP

Applications

High resolution SEM, Low pressure SEM, Energy dispersive X-ray Spectroscopy (EDX), Orientation imaging (EBSD), Compositional Imaging (BSE)

Source

Thermal Field Emission Gun (W - Zr/O coated)

Beam Voltage

0.1-30kV

Resolution

1,7nm at 20kV in high vacuum mode and 2,0nm at 30kV in variable pressure mode

Detectors

SE: Inlens, ET ; BSE; EBSD, VPSE (low vacuum), EDX, CCD

Stage

Motorized x,y(±50mm), z(25mm), rotation (360 continuous), tilt (-1 to +80 deg)

Other Capabilities

Variable pressure mode (up to 125Pa), quantitative analysis (point line, area); Au, C sample coating

Additional Information

Dr. Vasileios Dracopoulos, indy@iceht.forth.gr

Tool

FE-SEM, JEOL JSM-7000F equipped with INCA microanalysis system (Oxford Instruments)

Applications

High Resolution Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (EDS)

Source

Schottky type field-emission (T-FE) gun with Zr/O tungsten emitter

Beam Voltage

0.5 - 30kV

Resolution

1.2nm@15kV
3.0nm@1kV

Detectors

E-T, EDX (light elements down to B)

Stage

x-axis:70mm (motor driven), y-axis:50mm (motor driven), z axis: 3 to 41mm (continuous), rotation: 360o endless (motor driven), tilt: -5oo

Other Capabilities

Quantitative elemental analysis: spot, area, map
AuPd coating of samples

Additional Information

Katerina Tsagaraki, ktsag@physics.uoc.gr

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